Concepts for nondestructive and depth-resolved X-ray residual stress analysis in the near-surface region of nearly single crystalline materials with mosaic structure,Journal of Applied Crystallography

当前位置： X-MOL 学术 › J. Appl. Crystallogr. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Concepts for nondestructive and depth-resolved X-ray residual stress analysis in the near-surface region of nearly single crystalline materials with mosaic structure
Journal of Applied Crystallography ( IF 5.2 ) Pub Date : 2021-02-01 , DOI: 10.1107/s1600576720014016
Andreas Hollmann ₁ , Matthias Meixner ₁ , Manuela Klaus ₁ , Christoph Genzel ₁

Affiliation

Two evaluation concepts for nondestructive depth-resolved X-ray residual stress analysis in the near-surface region of materials with cubic symmetry and nearly single crystalline structure are introduced by simulated examples. Both concepts are based on the same data acquisition strategy, which consists in the determination of lattice-spacing depth profiles along the 〈hkl〉 poles by stepwise sample rotation around the scattering vector. Segmentation of these profiles parallel to the sample surface provides the lattice strain state as a function of depth. The first evaluation concept extends the crystallite group method developed for materials with pronounced crystallographic texture by the feature of depth resolution and can be applied to samples with arbitrary orientation. The second evaluation concept, which adapts the linear regression approach of the sin2ψ method for the case of single crystalline materials, is restricted to samples with (001) orientation. The influence of the strain-free lattice parameter a0 on residual stress analysis using both evaluation concepts is discussed on the basis of explicitly derived relations.

中文翻译：

具有镶嵌结构的近单晶材料近表面区域的无损深度分辨 X 射线残余应力分析概念

通过模拟算例介绍了立方对称、近单晶结构材料近表面区域无损深度分辨X射线残余应力分析的两种评价概念。这两个概念都基于相同的数据采集策略，即通过围绕散射矢量逐步旋转样本来确定沿 <hkl> 极点的晶格间距深度剖面。平行于样品表面的这些轮廓的分割提供了作为深度的函数的晶格应变状态。第一个评估概念通过深度分辨率的特点扩展了针对具有明显晶体结构的材料开发的微晶群方法，并且可以应用于任意取向的样品。第二个评估概念针对单晶材料的情况采用了 sin2ψ 方法的线性回归方法，仅限于具有 (001) 取向的样品。基于明确导出的关系，讨论了使用两种评估概念的无应变晶格参数 a0 对残余应力分析的影响。

更新日期：2021-02-01

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11