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Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-12-02 , DOI: 10.1002/pip.3368 Hiroshi Umishio 1 , Hitoshi Sai 1 , Takashi Koida 1 , Takuya Matsui 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-12-02 , DOI: 10.1002/pip.3368 Hiroshi Umishio 1 , Hitoshi Sai 1 , Takashi Koida 1 , Takuya Matsui 1
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Hydrogenated amorphous silicon (a‐Si:H) is a key enabler in high‐efficiency crystalline silicon solar cells known as the silicon heterojunction technology. Although efforts have been devoted to replacing doped a‐Si:H contact layer by hydrogenated nanocrystalline silicon (nc‐Si:H) to take advantage of its superior optoelectrical properties, it is still unclear whether the nc‐Si:H outperforms the a‐Si:H at the high efficiency level. Here, we show that boron‐doped (p)nc‐Si:H prepared by plasma‐enhanced chemical vapor deposition (PECVD) acts as an efficient hole contact layer, providing not only a mitigation of the parasitic absorption loss but also improvements in passivation and electrical contact properties. This results in an efficiency increase by 0.3%–0.6% absolute compared to the reference cell with the (p)a‐Si:H, and a best cell efficiency of 23.54%. We find that the critical thickness of the (p)nc‐Si:H layers required for gaining high efficiency (tc ~ 15–30 nm) is a factor of 3–6 greater than that of the (p)a‐Si:H. UV Raman spectroscopy and electrical conductivity measurements reveal that the tc of the (p)nc‐Si:H is associated with the layer growth needing for the surface coalescence of nanocrystals, determining the hole selectivity and the contact resistivity at the electrode/(p)nc‐Si:H interface. Our results suggest that such nanostructure evolution can be hastened by using a very‐high‐frequency PECVD process.
中文翻译：
纳米晶硅空穴接触层可提高硅异质结太阳能电池的效率：纳米结构演变对太阳能电池性能的影响
氢化非晶硅（a-Si：H）是被称为硅异质结技术的高效结晶硅太阳能电池的关键推动力。尽管人们致力于用氢化的纳米晶硅（nc-Si：H）代替掺杂的a-Si：H接触层以利用其优越的光电性能，但仍不清楚nc-Si：H是否优于a-Si：H接触层。 Si：H处于高效率水平。在这里，我们表明通过等离子体增强化学气相沉积（PECVD）制备的掺硼（p）nc-Si：H可以作为有效的空穴接触层，不仅可以减轻寄生吸收损失，而且可以改善钝化和电接触特性。与带有（的参考电池相比，这会导致绝对效率提高0.3％-0.6％p）a-Si：H，最佳电池效率为23.54％。我们发现，（的临界厚度p）纳米硅：为获得高效率（需要H层吨Ç〜15-30 nm）的比（3-6更高的因子p）的a-Si： H。紫外拉曼光谱和电导率测量表明，（p）nc-Si：H的t c与纳米晶体表面聚结所需的层生长有关，从而确定了电极的空穴选择性和接触电阻率/（p nc-Si：H接口 我们的结果表明，可以通过使用非常高频率的PECVD工艺来加快这种纳米结构的演变。
更新日期：2020-12-02
中文翻译：
纳米晶硅空穴接触层可提高硅异质结太阳能电池的效率：纳米结构演变对太阳能电池性能的影响
氢化非晶硅（a-Si：H）是被称为硅异质结技术的高效结晶硅太阳能电池的关键推动力。尽管人们致力于用氢化的纳米晶硅（nc-Si：H）代替掺杂的a-Si：H接触层以利用其优越的光电性能，但仍不清楚nc-Si：H是否优于a-Si：H接触层。 Si：H处于高效率水平。在这里，我们表明通过等离子体增强化学气相沉积（PECVD）制备的掺硼（p）nc-Si：H可以作为有效的空穴接触层，不仅可以减轻寄生吸收损失，而且可以改善钝化和电接触特性。与带有（的参考电池相比，这会导致绝对效率提高0.3％-0.6％p）a-Si：H，最佳电池效率为23.54％。我们发现，（的临界厚度p）纳米硅：为获得高效率（需要H层吨Ç〜15-30 nm）的比（3-6更高的因子p）的a-Si： H。紫外拉曼光谱和电导率测量表明，（p）nc-Si：H的t c与纳米晶体表面聚结所需的层生长有关，从而确定了电极的空穴选择性和接触电阻率/（p nc-Si：H接口 我们的结果表明，可以通过使用非常高频率的PECVD工艺来加快这种纳米结构的演变。
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