Abstract

The pseudobinary HgTe–CdTe, ZnTe–CdTe and HgTe–ZnTe systems were studied and Gibbs energy of mixing were determined at 400–1000 K temperature range. Miscibility gap analysis for CdZnHgTe quaternary material system is also performed by the Gibbs free energy calculations. Quantitative explorations show that there is no immiscibility gap for CdTe–HgTe material system in the mentioned above temperature range. In spite of that system, for the Cd_1 – xZn_xTe solid solutions, an immiscibility gap within x = 0.4–0.6 at T = 400 K already revealed. For the ZnTe–HgTe material system the situation is more complicated. Here, mutual incorporation of components is energetically favorable only up to impurity levels and an immiscibility gap occurs at entire compositions range starting from T = 800 K temperature and below. In addition, our calculations show that for the CdZnHgTe quaternary material system the immiscibility gap exists at the mentioned above temperature range and decreases at temperature increasing. Presented results can be useful at the growth of multicomponent bulk crystals, epitaxial thin films and nanostructures based on CdZnHgTe material system.

中文翻译：

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CdTe–ZnTe–HgTe材料系统：固溶体混溶性分析

摘要

研究了伪二元HgTe–CdTe，ZnTe–CdTe和HgTe–ZnTe系统，并在400–1000 K的温度范围内确定了吉布斯混合能。CdZnHgTe四元材料体系的混溶间隙分析也通过吉布斯自由能计算进行。定量研究表明，在上述温度范围内，CdTe-HgTe材料系统没有不混溶的间隙。尽管有该系统，但对于Cd _{1 –  x} Zn _x Te固溶体，在T处x = 0.4–0.6内的不混溶间隙=已显示400K。对于ZnTe-HgTe材料系统，情况更为复杂。在此，组分的相互掺入仅在杂质水平以下在能量上是有利的，并且在从T＝ 800K以下的温度开始的整个组成范围内发生不混溶性间隙。此外，我们的计算表明，对于CdZnHgTe四元材料体系，在上述温度范围内存在不混溶间隙，并且随着温度的升高而减小。提出的结果可用于基于CdZnHgTe材料系统的多组分块状晶体，外延薄膜和纳米结构的生长。