The effects of silica abrasives of five different particle sizes (10 nm, 40 nm, 60 nm, 80 nm and 100 nm) on the removal rate of silicon wafers were studied. The experiments were performed under two conditions, by taking the abrasive particles of uniform size and of two different sizes. The mixture of abrasive particles of two sizes increased the removal rate of the silicon wafer, and this improvement was more apparent when 10 nm particles were mixed with any other particle size. According to the stability of the slurry, the size pair of 10 nm and 60 nm presented the optimal result for the particle size mixing of abrasives. The physical model of the abrasive distribution between the silicon wafer and the polishing pad was established. The mechanism of the effect of mixed abrasive on the increase of silicon wafer removal rate was presented. Further, the contact area between the abrasive and silicon wafer was calculated by MATLAB. Based on this, the removal rate of the silicon wafer by the abrasive with mixed-sized particles was predicted with an error value of less than 10%.

研究了五种不同粒径（10 nm、40 nm、60 nm、80 nm和100 nm）的二氧化硅磨料对硅片去除率的影响。实验是在两种条件下进行的，即采用均匀尺寸的磨料颗粒和两种不同尺寸的磨料颗粒。两种尺寸磨料颗粒的混合提高了硅片的去除率，当 10 nm 颗粒与任何其他颗粒尺寸混合时，这种改进更加明显。根据浆料的稳定性，10 nm和60 nm的粒度对呈现出磨料粒度混合的最佳结果。建立了硅片与抛光垫之间磨粒分布的物理模型。阐述了混合磨料对提高硅片去除率的作用机理。更多，磨料与硅片的接触面积由MATLAB计算。据此预测混合粒度磨料对硅片的去除率，误差值小于10%。