Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe,Nano Letters

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Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe
Nano Letters ( IF 9.6 ) Pub Date : 2020-12-02 , DOI: 10.1021/acs.nanolett.0c03161
Xu Yang _{1,

2} , Xiao-Mei Li _{1,

2} , Yang Li _{1,

2} , Yan Li _{1,

2} , Rui Sun _{1,

2} , Jia-Nan Liu _{1,

2} , Xuedong Bai _{1,

2,

3} , Na Li _{1,

2} , Zong-Kai Xie _{1,

2} , Lei Su _{1,

2} , Zi-Zhao Gong _{1,

2} , Xiang-Qun Zhang ₁ , Wei He ₁ , Zhaohua Cheng _{1,

2,

3}

Affiliation

Ferroelectric Rashba semiconductors (FERSCs) have recently attracted intensive attention due to their giant bulk Rashba parameter, α_R, which results in a locking between the spin degrees of freedom and the switchable electric polarization. However, the integration of FERSCs into microelectronic devices has provoked questions concerning whether the Rashba effect can persist when the material thickness is reduced to several nanometers. Here we find that α_R can keep a large value of 2.12 eV Å in the 5.0 nm thick GeTe film. The behavior of α_R with thickness can be expressed by the scaling law and provides a 3D thickness limit of the bulk Rashba effect, d_c = 2.1 ± 0.5 nm. Finally, we find that the thickness can modify the Berry curvature as well, which influences the polarization and consequently alters the α_R. Our results give insight into understanding the factors influencing α_R in FERSCs and pave a novel route for designing Rashba-type quantum materials.

中文翻译：

铁电半导体GeTe中体积Rashba效应的三维极限

铁电拉什巴半导体（FERSCs）最近已引起关注密集由于其巨大的散装拉什巴参数，α _{- [R}，这导致自旋自由度和可转换的电偏振之间的锁定。但是，将FERSCs集成到微电子器件中引发了有关以下问题的问题：当材料厚度减小到几纳米时，Rashba效应是否会持续。在这里，我们发现，α _{- [R}可以保持2.12电子伏特埃的大的值在5.0纳米厚的GeTe膜。α的行为_{- [R}与厚度可通过比例定律来表示，并且提供的堆积拉什巴效果的3D厚度极限，d _Ç＝ 2.1±0.5nm。最后，我们发现，厚度可以修改贝里曲率为好，这影响偏振，并因此改变了α _{- [R}。我们的研究结果得到的洞察理解影响α的因素_{- [R}在FERSCs和铺平用于设计拉什巴型量子材料的新颖途径。

更新日期：2021-01-13

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