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Aging-Aware Request Scheduling for Non-Volatile Main Memory
arXiv - CS - Hardware Architecture Pub Date : 2020-11-30 , DOI: arxiv-2012.00050
Shihao Song, Anup Das, Onur Mutlu, Nagarajan Kandasamy

Modern computing systems are embracing non-volatile memory (NVM) to implement high-capacity and low-cost main memory. Elevated operating voltages of NVM accelerate the aging of CMOS transistors in the peripheral circuitry of each memory bank. Aggressive device scaling increases power density and temperature, which further accelerates aging, challenging the reliable operation of NVM-based main memory. We propose HEBE, an architectural technique to mitigate the circuit aging-related problems of NVM-based main memory. HEBE is built on three contributions. First, we propose a new analytical model that can dynamically track the aging in the peripheral circuitry of each memory bank based on the bank's utilization. Second, we develop an intelligent memory request scheduler that exploits this aging model at run time to de-stress the peripheral circuitry of a memory bank only when its aging exceeds a critical threshold. Third, we introduce an isolation transistor to decouple parts of a peripheral circuit operating at different voltages, allowing the decoupled logic blocks to undergo long-latency de-stress operations independently and off the critical path of memory read and write accesses, improving performance. We evaluate HEBE with workloads from the SPEC CPU2017 Benchmark suite. Our results show that HEBE significantly improves both performance and lifetime of NVM-based main memory.

中文翻译:

非易失性主内存的老化感知请求调度

现代计算系统正在拥抱非易失性存储器(NVM),以实现高容量和低成本的主存储器。NVM的工作电压升高会加速每个存储体外围电路中CMOS晶体管的老化。激进的设备扩展会增加功率密度和温度,从而进一步加速老化,挑战基于NVM的主存储器的可靠运行。我们提出了HEBE,一种减轻基于NVM的主存储器的电路老化相关问题的体系结构技术。HEBE建立在三个方面。首先,我们提出了一种新的分析模型,该模型可以根据存储体的利用率动态跟踪每个存储体外围电路的老化情况。第二,我们开发了一种智能的内存请求调度程序,该内存调度程序在运行时利用此老化模型仅在其老化超过临界阈值时才释放其压力。第三,我们引入了一个隔离晶体管,以对在不同电压下工作的外围电路的各个部分进行解耦,从而使解耦后的逻辑块能够独立进行长时间等待的降压操作,并脱离了存储器读写访问的关键路径,从而提高了性能。我们使用SPEC CPU2017 Benchmark套件中的工作负载评估HEBE。我们的结果表明,HEBE可以显着提高基于NVM的主内存的性能和寿命。我们引入了隔离晶体管,以对在不同电压下工作的外围电路的各个部分进行解耦,从而使解耦后的逻辑模块能够独立进行长时间等待的降压操作,并脱离了存储器读写访问的关键路径,从而提高了性能。我们使用SPEC CPU2017 Benchmark套件中的工作负载评估HEBE。我们的结果表明,HEBE可以显着提高基于NVM的主内存的性能和寿命。我们推出了隔离晶体管,以对在不同电压下工作的外围电路的各个部分进行解耦,从而使解耦后的逻辑模块能够独立进行长时间等待的降压操作,并脱离了存储器读写访问的关键路径,从而提高了性能。我们使用SPEC CPU2017 Benchmark套件中的工作负载评估HEBE。我们的结果表明,HEBE可以显着提高基于NVM的主内存的性能和寿命。
更新日期:2020-12-02
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