Among the many possible phase‐change materials that can be used in digital memories, Ge‐rich GeSbTe (GGST) alloys are of special interest due to their much higher thermal stability, i.e., the higher crystallization temperature, they offer. However, in contrast to congruent materials which may transit from the amorphous to the crystalline state while keeping the same homogeneous chemical composition, GGST crystallization is obtained through the successive formation of the Ge and GST‐225 phases. For this reason, they show distinct properties and characteristics from those found in the canonical GST‐225 and GeTe alloys. Herein, some of these characteristics, their crystallization kinetics, the effect of N doping and oxidation, and their electrical properties are reviewed and highlighted.

中文翻译：

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关于用于非易失性嵌入式存储器的富GeSbTe相变材料合金的一些独特特性

在可用于数字存储器的许多可能的相变材料中，富含Ge的GeSbTe（GGST）合金特别引人注目，因为它们具有更高的热稳定性，即更高的结晶温度。但是，与可能从非晶态过渡到结晶态同时保持相同的均匀化学组成的全等材料相反，通过连续形成Ge和GST-225相获得了GGST结晶。因此，它们表现出与标准GST-225和GeTe合金不同的特性和特征。本文中，对其中一些特性，其结晶动力学，N掺杂和氧化的影响以及其电性能进行了综述和重点介绍。