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Transient Optical Properties of CsPbX3/Poly(maleic anhydride‐alt‐1‐octadecene) Perovskite Quantum Dots for White Light‐Emitting Diodes
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-12-01 , DOI: 10.1002/pssr.202000498 Jian Xu 1 , Liang Zhu 1 , Jia Chen 2 , Saba Riaz 1 , Liwei Sun 1 , Ying Wang 1 , Wei Wang 3 , Jun Dai 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-12-01 , DOI: 10.1002/pssr.202000498 Jian Xu 1 , Liang Zhu 1 , Jia Chen 2 , Saba Riaz 1 , Liwei Sun 1 , Ying Wang 1 , Wei Wang 3 , Jun Dai 1
Affiliation
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Poly(maleic anhydride‐alt‐1‐octadecene) (PMAO)‐coated green CsPbBr3 and red CsPbBr0.6I2.4 quantum dots (QDs), as the phosphor materials for white light‐emitting diodes (WLEDs), are reported. The anhydride groups of PMAO can be bound to the surface ligands of perovskite QDs and act as a protective layer. The results show that CsPbX3/PMAO (X = Cl, Br, I) presents good crystallinity and excellent luminescence properties. Time‐resolved photoluminescence (TRPL) shows that the PL lifetime of CsPbX3/PMAO is prolonged, and the transient absorption (TA) results show that intraband hot‐exciton relaxation and exciton recombination can be slowed down when the CsPbX3 QDs are coated with PMAO. However, the PL quantum yields (PLQYs) increase for both the green‐emitting QDs and the red‐emitting QDs after PMAO coating. WLED devices are fabricated by integrating the green CsPbBr3/PMAO QDs and red CsPbBr0.6I2.4/PMAO QDs on the blue GaN chips. The devices show stable white light emission with Commission Internationale de L'Eclairage (CIE) color coordinates of (0.314, 0.291). The results indicate that CsPbX3/PMAO QDs can be an ideal downconversion fluorescent material for WLED devices.
中文翻译：
CsPbX3 /聚（马来酸酐-alt-1-十八碳烯）钙钛矿量子点的瞬态光学特性，用于白色发光二极管。
聚（马来酐ALT -1-十八碳烯）（PMAO）包被的绿色CsPbBr 3和红色CsPbBr 0.6我2.4量子点（QD），作为用于白色发光二极管（WLED的）时，磷光体材料的报道。PMAO的酸酐基团可以结合到钙钛矿QD的表面配体上并充当保护层。结果表明，CsPbX 3 / PMAO（X = Cl，Br，I）具有良好的结晶度和优异的发光性能。时间分辨光致发光（TRPL）表明CsPbX 3 / PMAO的PL寿命延长，瞬态吸收（TA）结果表明当CsPbX 3时带内热激子弛豫和激子复合可以减慢QD涂有PMAO。但是，PMAO涂层后，发绿光的量子点和发红光的量子点的PL量子产率（PLQYs）都会增加。通过在绿色GaN芯片上集成绿色CsPbBr 3 / PMAO QD和红色CsPbBr 0.6 I 2.4 / PMAO QD来制造WLED器件。该设备显示稳定的白光发射，国际照明委员会（CIE）的色坐标为（0.314，0.291）。结果表明，CsPbX 3 / PMAO QD可以成为WLED器件的理想下转换荧光材料。
更新日期：2021-01-13
中文翻译：
CsPbX3 /聚（马来酸酐-alt-1-十八碳烯）钙钛矿量子点的瞬态光学特性，用于白色发光二极管。
聚（马来酐ALT -1-十八碳烯）（PMAO）包被的绿色CsPbBr 3和红色CsPbBr 0.6我2.4量子点（QD），作为用于白色发光二极管（WLED的）时，磷光体材料的报道。PMAO的酸酐基团可以结合到钙钛矿QD的表面配体上并充当保护层。结果表明，CsPbX 3 / PMAO（X = Cl，Br，I）具有良好的结晶度和优异的发光性能。时间分辨光致发光（TRPL）表明CsPbX 3 / PMAO的PL寿命延长，瞬态吸收（TA）结果表明当CsPbX 3时带内热激子弛豫和激子复合可以减慢QD涂有PMAO。但是，PMAO涂层后，发绿光的量子点和发红光的量子点的PL量子产率（PLQYs）都会增加。通过在绿色GaN芯片上集成绿色CsPbBr 3 / PMAO QD和红色CsPbBr 0.6 I 2.4 / PMAO QD来制造WLED器件。该设备显示稳定的白光发射，国际照明委员会（CIE）的色坐标为（0.314，0.291）。结果表明，CsPbX 3 / PMAO QD可以成为WLED器件的理想下转换荧光材料。
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