We analyzed Incremental Step Pulse Programming (ISPP) slope degradation to improve the program efficiency of 3D NAND Flash memory using both measurement and simulation data. The simulation data are calibrated with the measurement data and they are in good agreement. The ISPP slope indicates program efficiency and its ideal value is 1. In reality, however, ISPP slope degradation (< 1) occurs in the charge trap flash (CTF) memory and makes program speed slow. Two parameters affecting the ISPP slope degradation are quantitatively investigated: electron trap density (N_T) and trap energy level (E_T) of the charge trap nitride (CTN). There are optimal N_T and E_T fitted with 3D NAND Flash cell providing better program efficiency with lower retention loss. Detailed reasons are physically explained by observing the electron behaviors in various N_T and E_T values.

我们分析了增量步进脉冲编程（ISPP）斜率劣化，以使用测量和仿真数据来提高3D NAND闪存的编程效率。仿真数据与测量数据已校准，并且吻合良好。ISPP斜率表示程序效率，其理想值为1。但是，实际上，ISPP斜率下降（<1）发生在电荷陷阱闪存（CTF）存储器中，并使程序速度变慢。定量研究了影响ISPP斜率退化的两个参数：电荷陷阱氮化物（CTN）的电子陷阱密度（N _T）和陷阱能级（E _T）。有最佳的N _T和E _T配备3D NAND闪存单元，可提高编程效率，并降低保留损耗。通过观察各种N _T和E _T值下的电子行为，从物理上解释了详细的原因。