Undoped Al_0.32Ga_0.68As material which was grown by metal-organic chemical vapor deposition at different growth temperature. The evolution mechanism of surface morphology of Al_0.32Ga_0.68As was explained by the variation of step growth direction and growth rate, which were affected by growth temperature. Electrochemical capacitance-voltage results showed the dependence of conductivity type on carbon incorporation. Al_0.32Ga_0.68As changed from p-type to n-type conductivity and carrier concentration decreased as growth temperature increased from 640 °C to 740 °C. The disorder of Al_0.32Ga_0.68As ternary alloy originated from its structural defects, which were attributed to aluminum (Al) compositional fluctuations by the incorporation of carbon impurity. The crystal quality of undoped Al_0.32Ga_0.68As was characterized by the intensity of Fermi-edge singularity peak. The change rule of the intensity of Al_0.32Ga_0.68As and GaAs peaks was discussed in terms of carrier transport and recombination properties.

未掺杂的Al _0.32 Ga _0.68作为在不同生长温度下通过金属有机化学气相沉积法生长的材料。Al _0.32 Ga _0.68 As表面形貌的演变机理是由台阶生长方向和生长速率的变化所解释的，受生长温度的影响。电化学电容-电压结果表明电导率类型对碳掺入的依赖性。Al _0.32 Ga _0.68 As从p型变为n型，随着生长温度从640°C升高到740°C，载流子浓度降低。Al _0.32 Ga _0.68的无序由于三元合金的结构缺陷，这归因于铝（Al）由于掺入碳杂质而引起的成分波动。非掺杂Al _0.32 Ga _0.68 As的晶体质量由费米边缘奇异峰的强度表征。从载流子迁移和复合性质的角度讨论了Al _0.32 Ga _0.68 As和GaAs峰强度的变化规律。