Abstract The properties of thin CdTe cap layers grown using the hot-wall epitaxy (HWE) method under low-temperature technological conditions (T ≤ 373 K) to Hg1-xCdxTe liquid phase epitaxial layers (LPE) have been investigated. It has been shown that the CdTe films deposited using this low-temperature method, can be used as the passivation coatings for the infrared (IR) detectors based on the HgCdTe epitaxial layers grown on the CdZnTe monocrystalline substrates, not affecting the HgCdTe properties. It has been found that CdTe films with the thickness d ≥ 360 nm are continuous and possess effective protective properties in application to Hg1-xCdxTe/CdZnTe IR detectors. The manufactured photodiode detectors demonstrate relatively good parameters: the detectivity D* = 2.7 × ·1010 cmW−1Hz1/2 (T = 80 K) for the long-wave range (8–10.5 μm) IR photodiodes (x ≈ 0.22) and noise-equivalent temperature difference NRTD ≈ 20 mK for mid-wavelength (3–5 μm) photodiodes.

中文翻译：

---

CdTe 薄膜作为 IR 和 THz 探测器的 HgCdTe 层的保护表面钝化

摘要 研究了在低温技术条件 (T ≤ 373 K) 下使用热壁外延 (HWE) 方法生长到 Hg1-xCdxTe 液相外延层 (LPE) 的薄 CdTe 帽层的性能。已经表明，使用这种低温方法沉积的 CdTe 薄膜可用作基于在 CdZnTe 单晶衬底上生长的 HgCdTe 外延层的红外 (IR) 探测器的钝化涂层，而不影响 HgCdTe 的性能。已经发现厚度 d ≥ 360 nm 的 CdTe 薄膜是连续的，并且在应用于 Hg1-xCdxTe/CdZnTe 红外探测器时具有有效的保护性能。制造的光电二极管探测器表现出相对较好的参数：长波范围 (8-10.0) 的探测率 D* = 2.7 × ·1010 cmW−1Hz1/2 (T = 80 K)。