This article presents a more accurate method to extract the density of trap state (DOS_T) distribution from the experimental data of transient photo-voltage (TPV) measurement, by exploring the difficulties in the technique given by Wang et al. We give up the hypothesis of exponential type DOS_T distribution in their theory and introduce the Gauss type distribution to replace it. Incorporating the multiple-trapping model and zero-temperature approximation, we put forward a more accurate DOS_T distribution extraction method based on the TPV experimental result. Our theory predicts that the logarithm of carrier lifetime is a quadratic function of photo-voltage in the whole interval, which is consistent with the result given by TPV experiment.

通过探究Wang等人在技术上的困难，本文提出了一种更准确的方法，该方法可以从瞬态光电压（TPV）测量的实验数据中提取陷阱态（DOS _T）分布的密度。我们在他们的理论中放弃了指数型DOS _T分布的假设，并介绍了高斯型分布来代替它。结合多陷阱模型和零温度近似，我们基于TPV实验结果提出了一种更准确的DOS _T分布提取方法。我们的理论预测，载流子寿命的对数在整个时间间隔内都是光电压的二次函数，这与TPV实验给出的结果一致。