This paper reports a deep‐ultraviolet LED (deep‐UV‐LED) package based on silicon MEMS process technology (Si‐PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through‐silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep‐UV LED die is directly mounted in the Si‐PKG by AuSn eutectic bonding without a submount. It has advantages in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si‐PKG. Based on simulation, further improvement of the optical output is expected by optimizing DUV‐LED die mount condition.

中文翻译：

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用于深紫外LED的硅晶片封装技术的发展

本文报告了一种基于硅MEMS工艺技术（Si-PKG）的深紫外LED（deep-UV-LED）封装。该封装包括一个由硅晶体各向异性蚀刻形成的腔体，填充有电镀铜的硅通孔（TSV），由电镀Ni / AuSn制成的结合金属以及用于气密密封的石英盖。通过AuSn共晶键合将深紫外LED裸片直接安装在Si-PKG中，而无需安装基座。与传统的AlN陶瓷封装相比，它在尺寸，散热，光利用效率，生产率和成本方面均具有优势。我们确认了30 mW的光输出以及在Si-PKG中Si（111）腔斜面上的有效反射。根据仿真，可以通过优化DUV-LED芯片安装条件来进一步改善光输出。