Abstract Copper Indium Selenide (CuInSe2) has been synthesized by solvothermal synthesis method. The Schottky diode (SD) has been fabricated by using the material and the interface characteristics of Al/CuInSe2/ITO have been investigated with the help of ac impedance spectroscopy (IS) analysis (under dark condition) and dc current-voltage (I–V) measurements (under both dark and photo condition). IS is a very important and powerful technique to investigate and analyze the impedance at the boundary regions of SDs. Ac impedance spectra of Al/CuInSe2 SD have been recorded in the wide range of frequency from 40 Hz to 20 MHz during dc bias scanning from −0.5 V to 0.5 V under dark condition. From forward I–V characteristics, important parameters such as ideality factor (η), photosensitivity, barrier height (Φb), series resistance (RS) of SD were obtained under dark and photo condition. The photosensitivity of the Al/CuInSe2 SD was found to be 3.36. For better realization of charge transport phenomena through the MS junction, space charge limited current (SCLC) theory has been employed. The effective mobility of the carrier is evaluated in dark and photo condition as 0.42 × 10−3 m2V−1s−1 and 2.11 × 10−3 m2V−1s−1 respectively. It has been observed that the mobility is improved 5 times under illumination compared to the dark condition.

中文翻译：

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利用阻抗谱 (IS) 测量研究 Al/CuInSe2 肖特基器件的传导动力学及其光敏行为

摘要 铜铟硒（CuInSe2）是通过溶剂热合成法合成的。肖特基二极管 (SD) 已使用该材料制成，并借助交流阻抗谱 (IS) 分析（在黑暗条件下）和直流电流 - 电压（I– V) 测量（在黑暗和照片条件下）。IS 是一种非常重要和强大的技术，用于研究和分析 SD 边界区域的阻抗。在黑暗条件下从 -0.5 V 到 0.5 V 的直流偏置扫描期间，已在 40 Hz 到 20 MHz 的宽频率范围内记录了 Al/CuInSe2 SD 的交流阻抗谱。从正向 I-V 特性，重要参数如理想因子 (η)、光敏度、势垒高度 (Φb)、SD的串联电阻（RS）是在黑暗和光照条件下获得的。发现 Al/CuInSe2 SD 的光敏度为 3.36。为了更好地实现通过 MS 结的电荷传输现象，已采用空间电荷限制电流 (SCLC) 理论。载流子的有效迁移率在黑暗和光照条件下分别评估为 0.42 × 10-3 m2V-1s-1 和 2.11 × 10-3 m2V-1s-1。已经观察到，与黑暗条件相比，在光照下的迁移率提高了 5 倍。分别为 42 × 10−3 m2V−1s−1 和 2.11 × 10−3 m2V−1s−1。已经观察到，与黑暗条件相比，在光照下的迁移率提高了 5 倍。分别为 42 × 10−3 m2V−1s−1 和 2.11 × 10−3 m2V−1s−1。已经观察到，与黑暗条件相比，在光照下的迁移率提高了 5 倍。