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A 25-Gb/s inductorless SiGe BiCMOS receiver for 100-Gb/s optical links
Integration ( IF 2.2 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.vlsi.2020.11.008
Shuo Li , Junren Pan , Jin He , Zhiyuan Cao , Hao Wang , Sheng Chang , Qijun Huang

This paper presents the design and measurements of a 25-Gb/s inductorless optical receiver in a 0.25-μm SiGe BiCMOS process for 100-Gb/s (25-Gb/s × 4 lines) Ethernet. As the first stage of the proposed optical receiver, a transimpedance amplifier (TIA) employing a pseudo-differential structure with a feedback resistor incorporates DC offset cancellation (DOC) to enhance the input dynamic range. Cascaded by the improved two-stage limiting amplifiers and a 50-Ω output buffer, the receiver achieves high differential swings. For a bit-error rate (BER) of 10−12 at 25 Gb/s, the measured transimpedance gain, bandwidth, sensitivity, and output swing are 63.17 dBΩ, 20.7 GHz, −10.3 dBm, and 352.7 mV, respectively. The power consumption of the entire receiver is 111.6 mW and the core area of the die is 640 μm × 135 μm.



中文翻译:

用于100 Gb / s光链路的25 Gb / s无电感器SiGe BiCMOS接收器

本文介绍了针对0.25μmSiGe BiCMOS工艺的25 Gb / s无电感器光接收器的设计和测量,适用于100 Gb / s(25 Gb / s×4线)以太网。作为拟议的光接收器的第一阶段,采用伪差分结构和反馈电阻的跨阻放大器(TIA)结合了DC偏移消除(DOC)来增强输入动态范围。通过改进的两级限幅放大器和一个50Ω输出缓冲器,该接收器实现了高差分摆幅。对于 25 Gb / s下的10 -12的误码率(BER),测得的跨阻增益,带宽,灵敏度和输出摆幅分别为63.17dBΩ,20.7 GHz,-10.3 dBm和352.7 mV。整个接收器的功耗为111.6 mW,芯片的核心面积为640μm×135μm。

更新日期:2020-12-14
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