Abstract In this study, tin oxide (SnO2) films are prepared by using plasma enhanced atomic layer deposition (PEALD) with tetrakis(dimethylamino)tin(IV) (TDMA-Sn) as the Sn metal source and O2/Ar mixture as the oxidant. The plasma power is varied from 1000 to 3000 W to investigate its influence of oxygen vacancies and defects on the SnO2 film properties. The experimental results show that the plasma power plays an important role in the deposition of SnO2 films. Unwanted Sn3O4 formation is observed at both of low and high powers. The optical emission spectra of the plasma with different power are analyzed to obtain the insight of the mechanism of the PEALD SnO2 films growth. The optimal plasma power of 1500 W is found to be very close to the threshold where the oxygen radical intensity starts to sharply increase. Lower and higher powers can lead to insufficient oxidation and strong ion bombardment, respectively, resulting in reduced SnO2 film quality.

中文翻译：

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等离子体功率对等离子体增强原子层沉积法制备氧化锡结构性能的影响

摘要 本研究以四（二甲氨基）锡（IV）（TDMA-Sn）为Sn金属源，O2/Ar混合物为氧化剂，采用等离子体增强原子层沉积（PEALD）制备氧化锡（SnO2）薄膜。 . 等离子体功率从 1000 到 3000 W 不等，以研究其氧空位和缺陷对 SnO2 薄膜特性的影响。实验结果表明，等离子体功率在SnO2薄膜的沉积中起着重要作用。在低功率和高功率下都观察到不需要的 Sn3O4 形成。分析了不同功率等离子体的光发射光谱，以深入了解 PEALD SnO2 薄膜的生长机理。发现 1500 W 的最佳等离子体功率非常接近氧自由基强度开始急剧增加的阈值。