Zinc oxide (ZnO), indium tungsten oxide (IWO), and ZnO incorporated indium tungsten oxide (ZIWO) thin films (thickness ~ 10 nm) have been fabricated at room temperature by radio-frequency (RF) magnetron sputtering to study their physical and chemical properties for development of high performance and stable thin film transistors. The study reveals that ZnO incorporation with IWO resulted amorphous, smooth and better quality of thin films in comparison to the zinc oxide and indium tungsten oxide. Furthermore, the fabricated ZIWO thin film transistor exhibits a good device performance with field-effect mobility (μ_FE) of 26.80 cm²/Vs, threshold voltage (V_th) of 0.62 V, sub-threshold swing (SS) of 0.39 V/decade, and positive biased stress shifting (∆V_th) of +0.82 V than the IWO (conducting in nature) and ZnO (μ_FE ~ 1.95 cm²/Vs, V_th ~ 14.40 V, SS ~ 1.68 V/decade, ∆V_th of +4.20 V) TFTs counterparts.

在室温下，通过射频（RF）磁控管溅射制备了氧化锌（ZnO），氧化铟钨（IWO）和掺有ZnO的氧化铟钨（ZIWO）薄膜（厚度约10 nm），以研究其物理性能和化学特性，用于开发高性能和稳定的薄膜晶体管。研究表明，与氧化锌和氧化铟钨相比，ZnO与IWO的结合产生了无定形，光滑且质量更好的薄膜。此外，所制得的ZIWO薄膜晶体管具有良好的器件性能，场效应迁移率（_μFE）为26.80 cm ² / Vs，阈值电压（V _th）为0.62 V，亚阈值摆幅（SS）为0.39 V /十年，正偏应力转移（ΔV_个）比IWO 0.82的V（在自然界中导通）和ZnO（μ _FE〜1.95厘米² / Vs的，V_日〜14.40 V，SS〜1.68 V /十年中，ΔV_日4.20的V）的TFT对应。