Abstract In this work, the Mg2Ti1-xGa4/3xO4 (x = 0.05, 0.07, 0.09, 0.11, 0.13) microwave dielectric ceramic are prepared through solid-state reaction. XRD refinement patterns confirm that a pure spinel structure phase is formed. Intrinsic dielectric properties of Mg2Ti1-xGa4/3xO4 ceramics are researched by Raman spectra and P-V-L theory. The change of er is the result of the combined effect of internal factor ([Mg(2)/Ti/Ga]O6 octahedron bond iconicity) and external factor (relative density). Based on Raman spectra, FWHM of A1g and Q × f value have the same changing trend. In addition, τf value decreases due to the enhancement of bond valence and αL. Microwave dielectric properties of Mg2Ti1-xGa4/3xO4(er = 14.84, Q × f = 205,416GHz, τf = −57.9 ppm/°C) sintered at 1420°C for 4h are obtained when x=0.09.

中文翻译：

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Mg2Ti1-xGa4/3xO4(0.05≤x≤0.13)陶瓷的晶体结构和微波介电性能

摘要 本工作通过固相反应制备了Mg2Ti1-xGa4/3xO4 (x = 0.05, 0.07, 0.09, 0.11, 0.13)微波介质陶瓷。XRD 精修图证实形成了纯尖晶石结构相。利用拉曼光谱和PVL理论研究了Mg2Ti1-xGa4/3xO4陶瓷的本征介电性能。er 的变化是内部因素（[Mg(2)/Ti/Ga]O6 八面体键象性）和外部因素（相对密度）共同作用的结果。基于拉曼光谱，A1g 的 FWHM 和 Q × f 值具有相同的变化趋势。此外，由于键价和 αL 的增强，τf 值减小。Mg2Ti1-xGa4/3xO4(er = 14.84, Q × f = 205,416GHz, τf = -57.9 ppm/°C) 在 1420°C 下烧结 4 小时的微波介电性能是在 x=0.09 时获得的。