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Microwave absorption and mechanical properties of SiCf/SiOC composites with SiO2 fillers
Ceramics International ( IF 5.1 ) Pub Date : 2020-11-30 , DOI: 10.1016/j.ceramint.2020.11.214
Zhaowen Ren , Wancheng Zhou , Yuchang Qing , Shichang Duan , Haijun Pan , Yingying Zhou , Ning Li

Owing to the polysiloxane (PSO) characteristic of cheap, healthy, available and low free carbon content, in this research the SiCf/SiOC composites were manufactured by polymer infiltration and pyrolysis (PIP) method with various content of SiO2 fillers. It can be concluded from the DSC-TGA and XRD analysis that SiOC ceramic was formed from PSO when pyrolysis temperature exceeded 800°C and after pyrolysis at 1000°C the PSO mainly composed by amorphous SiO2. The effects of SiO2 fillers on morphology of SiOC matrix, flexural strength, complex permittivity, and microwave absorption property of SiCf/SiOC composites were investigated. The results indicated that the SiO2 fillers can enhance the density and reduce the microcracks of matrix. Therefore, the maximum flexural strength 201.09 MPa can be obtained by adding 5g SiO2 filler into PSO precursor solution. The complex permittivity and flexural strength of composites first increased when content of SiO2 filler enhanced from 0 to 5g. Nevertheless, with the content of SiO2 filler increased from 5g to 10g and 15g, the complex permittivity and flexural strength of composites decreased. In summary, the SiCf/SiOC composites with 10g SiO2 fillers not only possess the reflection loss as low as -26.02 dB and the effective absorption bandwidth (EAB) below -10dB up to 3.21 GHz at the thickness of 3.0 mm but also own the flexural strength of 171.71 MPa.



中文翻译:

SiO 2填料对SiC f / SiOC复合材料的微波吸收和力学性能

鉴于聚硅氧烷(PSO)具有便宜,健康,可得且游离碳含量低的特点,本研究采用聚合物渗透和热解(PIP)方法制备了具有不同含量的SiO 2填料的SiC f / SiOC复合材料。从DSC-TGA和XRD分析可以得出结论,当热解温度超过800℃时,由PSO形成SiOC陶瓷,而在1000℃下热解后,PSO主要由非晶态SiO 2组成。研究了SiO 2填料对SiC f / SiOC复合材料的SiOC基体形态,弯曲强度,复介电常数和微波吸收性能的影响。结果表明SiO 2填料可以提高密度并减少基体的微裂纹。因此,通过向PSO前体溶液中添加5 g SiO 2填料,可以获得最大挠曲强度201.09 MPa 。当SiO 2填料的含量从0g增加到5g时,复合材料的复介电常数和弯曲强度首先增加。然而,随着SiO 2填料含量从5g增加到10g和15g,复合材料的复介电常数和弯曲强度降低。总之,具有10g SiO 2的SiC f / SiOC复合材料 在厚度为3.0 mm时,填料不仅具有低至-26.02 dB的反射损耗和低于3.2dB GHz的-10dB以下的有效吸收带宽(EAB),而且具有171.71 MPa的抗弯强度。

更新日期:2020-12-01
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