Abstract In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

中文翻译：

---

通过热退火在 Ni/Co/Si(1 0 0) 体系中形成镍和钴硅化物的研究

摘要 在这项工作中，Ni/Co/Si 系统在 300 °C 到 800 °C 的温度范围内退火。通过 X 射线衍射 (XRD)、拉曼光谱、卢瑟福背散射光谱 (RBS)、原子力显微镜 (AFM) 和薄层电阻测量对样品进行表征。XRD和拉曼光谱结果表明，镍和钴硅化物（CoSi、Co2Si、Ni2Si、NiSi、NiSi2、CoSi2）的形成是一个退火温度相关的扩散过程。扩散现象由 RBS 证明。与薄膜表面粗糙度相关的薄层电阻的低值归因于 CoSi 和 NiSi 相的形成。