Our work involves the growth of well aligned vertical nanorods of ZnO on transparent indium doped tin oxide (ITO) conductive substrate and fabrication of Au/ZnO Nanorods/ITO Heterojunction device. The observation of non-ideal diode current density-voltage (J-V) characteristics of the device has been evaluated with various conduction mechanisms [Ohmic, space-charge limited conduction (SCLC)]. The charge carrier mobility is estimated to be ∼0.05 cm²/Vs. The presence of deep level defects in the ZnO nanorods is accountable for these two different transport mechanisms and it is backed by photoluminescence, distinctly. The estimated density of deep trap states is n_trap∼5.76 10¹³ cm⁻³. The charge carrier density and built-in potential of this device are obtained from electrochemical impedance spectroscopy (EIS). The average work function of vertical ZnO nanorods is found out to be ∼4.93 eV. Henceforth, our results explain the charge transport mechanism which plays a key role in optoelectronic based devices for various applications.

我们的工作涉及在透明的铟掺杂氧化锡（ITO）导电衬底上生长ZnO的垂直排列的纳米棒，并制造Au / ZnO纳米棒/ ITO异质结器件。器件的非理想二极管电流密度-电压（JV）特性观察已通过各种传导机制[欧姆，空间电荷受限传导（SCLC）]进行了评估。载流子迁移率估计为〜0.05 cm ² / Vs。ZnO纳米棒中深层缺陷的存在是造成这两种不同传输机制的原因，并且明显受到光致发光的支持。深阱态的估计密度为n_阱〜5.76 10 ¹³ cm ^-3。该器件的电荷载流子密度和内置电势是从电化学阻抗谱（EIS）获得的。垂直ZnO纳米棒的平均功函数为〜4.93 eV。今后，我们的结果解释了电荷传输机制，该机制在基于光电的各种应用设备中起着关键作用。