The past decade has seen significant growth in the field of thin film lithium niobate electro-optic modulators, which promise reduced voltage requirements and higher modulation bandwidths on a potentially integrated platform. This article discusses the state-of-the-art in thin film modulator technology and presents a simplified simulation technique for quickly optimizing a hybrid silicon- or silicon nitride-lithium niobate modulator. Also discussed are the feasibility of creating a 1 V half-wave voltage, 100 GHz bandwidth modulator, and the design specifications for a single hybrid silicon-lithium niobate platform optimized to operate across all telecommunication bands (between 1260 and 1675 nm wavelengths).

在过去的十年中，薄膜铌酸锂电光调制器领域取得了显着增长，这有望降低电压要求并在潜在集成平台上实现更高的调制带宽。本文讨论了薄膜调制器技术的最新发展，并提出了一种简化的仿真技术，可用于快速优化混合硅或氮化硅-铌酸锂调制器。还讨论了创建1 V半波电压，100 GHz带宽调制器的可行性，以及为在所有电信频段（1260至1675 nm波长之间）上运行而优化的单个混合硅铌酸锂平台的设计规范。