A SiC crystal mixed with 4H-, 6H-, and 15R-SiC polytypes and their wetting properties were characterized using precisely dispensed de-ionized (DI) water drops. Contact angles of a DI water drop on SiC surfaces were quantitatively determined by analyzing the sideview image of a DI water drop in contact with the SiC substrate with mixed polytypes using image analysis software. The contact angle measurements showed that the contact angle for the Si-face (0001) was approximately 4^o ∼ 8^o greater than that for the C-face (000-1) regardless of polytype. The surface roughness of both Si-face and C-face was measured using atomic force microscopy and confirmed to be nearly identical. Due to the difference in surface energy of polarity of SiC basal planes, the contact angle measured from the Si-face (0001) after native oxide removal showed significant decrease and it recovered over time by room temperature oxidation in air. In contrast, the contact angle measured from the C-face (000-1) after native oxide removal, showed significant decrease and it was maintained, even after room temperature oxidation for 24 h in air. We found that there is correlation between the wetting property of SiC polytypes of 4H-, 6H-, and 15 R and a difference in their surface potential energy corresponding to the hexagonality of each SiC polytype determined by the atomic arrangement.

使用精确分配的去离子（DI）水滴表征了混合有4H-，6H-和15R-SiC多型的SiC晶体及其润湿性能。通过使用图像分析软件分析与混合多型SiC基板接触的DI水滴的侧面图像，可以定量确定SiC表面上的DI水滴的接触角。接触角测量显示，对于在Si-面（0001）的接触角为约4 ^ö〜8 ^ö不论多型，都比C面（000-1）大。使用原子力显微镜测量了Si面和C面的表面粗糙度，并确认几乎相同。由于SiC基面的极性的表面能的差异，在去除天然氧化物后，从Si面（0001）测得的接触角显着减小，并通过空气中的室温氧化随时间恢复。相反，去除天然氧化物后，从C面（000-1）测得的接触角显着减小并保持不变，即使在室温下在空气中氧化24小时也是如此。我们发现SiC多型4H-，6H-，