Magneto-ionic control of magnetism is a promising route toward the realization of non-volatile memory and memristive devices. Magneto-ionic oxides are particularly interesting for this purpose, exhibiting magnetic switching coupled to resistive switching, with the latter emerging as a perturbation of the oxygen vacancy concentration. Here, we report on electric-field-induced magnetic switching in a La0.7Sr0.3MnO3 (LSMO) thin film. Correlating magnetic and chemical information via photoemission electron microscopy, we show that applying a positive voltage perpendicular to the film surface of LSMO results in the change in the valence of the Mn ions accompanied by a metal-to-insulator transition and a loss of magnetic ordering. Importantly, we demonstrate that the voltage amplitude provides granular control of the phenomena, enabling fine-tuning of the surface electronic structure. Our study provides valuable insight into the switching capabilities of LSMO that can be utilized in magneto-ionic devices.

中文翻译：

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La0.7Sr0.3MnO3 中磁离子效应的光电电子显微术

磁力的磁离子控制是实现非易失性存储器和忆阻器件的有希望的途径。为此目的，磁离子氧化物特别令人感兴趣，表现出与电阻开关耦合的磁开关，后者表现为氧空位浓度的扰动。在这里，我们报告了 La0.7Sr0.3MnO3 (LSMO) 薄膜中电场诱导的磁开关。通过光电电子显微镜关联磁性和化学信息，我们表明垂直于 LSMO 的膜表面施加正电压会导致 Mn 离子的价态发生变化，同时伴随着金属到绝缘体的转变和磁性有序性的丧失. 重要的是，我们证明了电压幅度提供了对现象的精细控制，能够微调表面电子结构。我们的研究为可用于磁离子设备的 LSMO 的开关能力提供了宝贵的见解。