The photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitance–voltage profiling under monochromatic illumination. Irradiation led to a very strong increase in photocurrent, which closely correlated with the increase in deep trap density and the decrease after illumination of the effective Schottky barrier height due to hole capture by acceptors. A similar effect was observed on an as-grown βs-Ga2O3 film with a high density of deep acceptors. Electron beam induced current measurements indicated a strong amplification of photocurrent, which is attributed to the Schottky barrier lowering by holes trapped on acceptors near the surface. Photocurrent build-up and decay curves show several time constants ranging from several milliseconds to many seconds. These characteristic times are attributed to tunneling of electrons into the hole-filled acceptors near the surface and to thermal emission of holes from deep acceptors.

中文翻译：

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Ga2O3 肖特基二极管的光敏性：中子辐照前后存在的深受体陷阱的影响

在 β-Ga2O3 肖特基二极管中测量中子辐照前后由 259 nm 波长激发产生的光电流。这些样品的不同之处在于带隙下半部分的深受体密度，如在单色照明下通过电容-电压分析检测到的。辐照导致光电流的非常强烈的增加，这与深陷阱密度的增加和由于受体的空穴捕获导致的有效肖特基势垒高度照射后的减少密切相关。在具有高密度深受体的 βs-Ga2O3 薄膜上观察到类似的效果。电子束感应电流测量表明光电流的强烈放大，这归因于肖特基势垒被捕获在表面附近受体上的空穴降低。光电流建立和衰减曲线显示了几个时间常数，范围从几毫秒到几秒不等。这些特征时间归因于电子隧道进入表面附近充满空穴的受体以及来自深受体的空穴的热发射。