A remarkable several times increase (up to 10 K) of the superconducting critical temperature Tc has been observed in point contacts created on the base of single crystals AFe$_2$As$_2$ (A = K, Cs, Rb). Possible reasons for such a Tc increase in point contacts are briefly discussed on a qualitative level. Among them, it is most likely attributed to interfacial carrier doping and/or uniaxial non-homogeneous pressure arising when the contact is created.

中文翻译：

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通过点接触观察到的强过掺杂铁基超导体 AFe2As2 (A = K, Cs, Rb) 的临界温度提高

在基于单晶 AFe$_2$As$_2$（A = K、Cs、Rb）的点接触中观察到超导临界温度 Tc 显着增加了数倍（高达 10 K）。在定性水平上简要讨论了点接触中这种 Tc 增加的可能原因。其中，最有可能归因于界面载流子掺杂和/或产生接触时产生的单轴非均匀压力。