We proposed a sandwich structure made of an antiferromagnetic film (AF) embedded in two graphene layers for enhancing the generation of sum frequency (SF). Our numerical results show that a maximum of SF outputs as high as 72.9 W/cm² can be achieved with the sandwich structure at μ_c = 0.25 eV, which are improved two orders of magnitude compared with the single AF. The obvious SF response of the proposed structure comes from the light localization of graphene on the upper or bottom surface and also from the interference effect in the AF. In addition, the position of SF outputs can be tuned by adjusting the external magnetic field strength. Finally, the sandwich structure can be easily built in experiment. Therefore, the results in this work may extend the applications of photoelectric devices in THz fields.

中文翻译：

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增强石墨烯覆盖的反铁磁膜中总和频率的产生

我们提出了一种由反铁磁膜（AF）嵌入两个石墨烯层制成的三明治结构，以增强总和频率（SF）的生成。我们的计算结果表明，最大输出SF高达72.9瓦/平方厘米的²可以与夹层结构在实现μ _Ç= 0.25 eV，与单个AF相比提高了两个数量级。所提出的结构明显的SF响应来自石墨烯在上表面或下表面的光局部化以及AF中的干涉效应。此外，可以通过调整外部磁场强度来调整SF输出的位置。最后，可以在实验中轻松构建三明治结构。因此，这项工作的结果可以扩展光电器件在太赫兹领域的应用。