This paper presents 28 GHz GaAs front‐end IC for 5G beamforming systems with single positive supply voltage. A 28 GHz front‐end IC consists of a 3‐stage power amplifier, a 3‐stage low noise amplifier and two reflective type single pole double throw switches in 0.15 μm enhancement‐mode (E‐mode) GaAs pHEMT technology. The proposed 28 GHz front‐end IC is controlled only with single positive supply voltage. The measured front‐end IC Tx mode gain and Rx mode gain are 16.3 dB and 16.8 dB at 28 GHz, respectively. The achieved output P_1dB and saturation power (P_SAT) in Tx mode are 18 dBm and 21 dBm, respectively. The achieved input P_1dB and noise figure in Rx mode are −8 dBm and 3 dB, respectively. The 28 GHz GaAs front‐end IC consumes DC current of 216 mA in Tx mode at 4 V supply voltage and 20 mA in Rx mode at 2.5 V supply voltage. The proposed 28 GHz front‐end IC chip size is 2.5 x 2.2 mm².

中文翻译：

---

具有单个正电源电压的28 GHz GaAs前端IC

本文介绍了用于具有单正电源电压的5G波束成形系统的28 GHz GaAs前端IC。一个28 GHz的前端IC包括一个3级功率放大器，一个3级低噪声放大器和两个采用0.15μm增强模式（E模式）GaAs pHEMT技术的反射型单刀双掷开关。拟议的28 GHz前端IC仅由单个正电源电压控制。在28 GHz时，测得的前端IC Tx模式增益和Rx模式增益分别为16.3 dB和16.8 dB。在Tx模式下，实现的输出P _1dB和饱和功率（P _SAT）分别为18 dBm和21 dBm。达到的输入P _1dBRx模式下的噪声系数和噪声系数分别为-8 dBm和3 dB。28 GHz GaAs前端IC在4 V电源电压下在Tx模式下消耗216 mA的DC电流，在2.5 V电源电压下在Rx模式下消耗20 mA的DC电流。建议的28 GHz前端IC芯片尺寸为2.5 x 2.2 mm ²。