Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices,Advanced Electronic Materials

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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-11-30 , DOI: 10.1002/aelm.202000815
Sebastian Siegel ₁ , Christoph Baeumer _{1,

2} , Alexander Gutsche ₁ , Moritz Witzleben ₂ , Rainer Waser _{1,

2} , Stephan Menzel ₁ , Regina Dittmann ₁

Affiliation

Memristive switching devices are promising for future data storage and neuromorphic computing applications to overcome the scaling and power dissipation limits of classical CMOS technology. Many groups have engineered bilayer oxide structures to enhance the switching performance especially in terms of retention and device reliability. Here, introducing retention enhancement oxide layers into the memristive stack is shown to result in a reduction of the switching speed not only by changing the voltage and temperature distribution in the cell, but also by influencing the rate‐limiting‐step of the switching kinetics. In particular, it is demonstrated that by introducing a retention enhancement layer into resistive switching SrTiO₃ devices, the kinetics are no longer determined by the interface exchange reaction between switching oxide and active electrode, but depend on the oxygen ion migration in the additional interface layer. Thus, the oxygen migration barrier in the additional layer determines the switching speed. This trade‐off between retention and switching speed is of general importance for rational engineering of memristive devices.

中文翻译：

在电阻切换ReRAM器件中的数据保留和切换速度之间进行权衡

忆阻开关器件有望在未来的数据存储和神经形态计算应用中克服传统CMOS技术的缩放和功耗限制。许多小组设计了双层氧化物结构来增强开关性能，特别是在保持性和器件可靠性方面。在此，将保持增强氧化物层引入忆阻堆叠中不仅降低了电池中的电压和温度分布，而且还影响了开关动力学的限速步骤，从而导致开关速度降低。特别地，证明了通过将保留增强层引入电阻性开关SrTiO _3中在装置中，动力学不再取决于开关氧化物和活性电极之间的界面交换反应，而是取决于附加界面层中氧离子的迁移。因此，附加层中的氧气迁移阻挡层决定了开关速度。保持和转换速度之间的这种折衷对于忆阻器件的合理设计具有普遍意义。

更新日期：2021-01-14

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