Organic ferroelectrics, particularly the polymer polyvinylidene fluoride and its copolymer polyvinylidene fluoride‐trifluoroethylene, have received much attention owing to their low cost, flexibility, and convenient thin film fabrication. However, development of this outstanding material for electronic applications is significantly impeded by its attributes of large coercive electric fields and poor spontaneous polarization. While the recent breakthroughs reveal that several kinds of molecular ferroelectrics (e.g., diisopropylammonium bromide (DIPAB)) can exhibit excellent properties comparable to inorganic ferroelectrics, it is still difficult to obtain high‐quality continuous thin films for ferroelectric devices with high performance. In this work, a simple solution strategy is used for the preparation of large‐area high crystallinity or even single‐crystal DIPAB films. Subsequently, planar ferroelectric capacitors are developed with large in‐plane ferroelectric polarization. These capacitors possess excellent memory function with small operating voltages (1–3 V), and a record remnant polarization of 13 µC cm⁻² for organic ferroelectric devices. The findings have the potential to pave the way for the substitution of conventional ferroelectric polymers with DIPAB films for future organic ferroelectric devices.

中文翻译：

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用于低功率横向有机铁电电容器的晶圆级二异丙基溴化铵薄膜

有机铁电材料，尤其是聚合物聚偏二氟乙烯及其共聚物聚偏二氟乙烯-三氟乙烯，因其低成本，柔性和方便的薄膜制造而备受关注。然而，由于其大的矫顽电场和差的自发极化的特性，大大阻碍了这种用于电子应用的杰出材料的开发。尽管最近的突破表明，几种分子铁电体（例如，二异丙基溴化铵（DIPAB））可以表现出与无机铁电体相当的优异性能，但仍然难以获得高性能的高性能铁电体连续薄膜。在这项工作中 一种简单的解决方案策略用于制备大面积高结晶度甚至单晶DIPAB膜。随后，开发出具有大平面内铁电极化的平面铁电电容器。这些电容器具有出色的存储功能，工作电压低（1-3 V），并且记录的剩余极化强度为13 µC cm⁻²用于有机铁电器件。这些发现有可能为将来的有机铁电器件铺平用DIPAB膜代替常规铁电聚合物的道路。