Abstract This study aims to overcome a major challenge that is reaching high pore-filling percentage (FP) in the fabrication of high aspect ratio (HAR) nanowires (NWs) grown electrochemically in large diameter porous templates. By ultrathinning the barrier layer of hard anodized anodic aluminum oxide (AAO) templates with large pore diameters (Dp) of 110 and 180 nm, while also filling its branched sections with FeCoNi, the development of Cu FP was investigated for different Cu solution concentration (MCu=0.05−0.3 M) in the fabrication of HAR Cu NW arrays using a pulsed electrochemical deposition technique under optimized parameters. At Dp= 180 nm, field-emission scanning electron microscopic investigations revealed that, increasing MCu increases the corresponding FP up to 62%, resulting in highly uniform NW arrays. Structural properties were investigated by X-ray diffraction analysis, indicating that different phase percentages of Cu and Cu2O are formed depending on Dp of AAO and MCu. The resulting HAR Cu NWs were also released from the hard templates to obtain free-standing NW arrays with a length of 70 μm, which may find potential use for large-scale nanodevice applications.

中文翻译：

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开发大直径硬质阳极氧化铝模板中的铜孔填充率

摘要 本研究旨在克服在大直径多孔模板中电化学生长的高纵横比 (HAR) 纳米线 (NW) 的制造中达到高孔隙填充百分比 (FP) 的主要挑战。通过超薄具有 110 和 180 nm 大孔径 (Dp) 的硬质阳极氧化铝 (AAO) 模板的阻挡层，同时用 FeCoNi 填充其分支部分，研究了不同 Cu 溶液浓度下 Cu FP 的发展。 MCu=0.05-0.3 M) 在优化参数下使用脉冲电化学沉积技术制造 HAR Cu NW 阵列。在 Dp=180 nm 处，场发射扫描电子显微镜研究表明，增加 MCu 将相应的 FP 增加到 62%，从而产生高度均匀的 NW 阵列。通过 X 射线衍射分析研究了结构特性，表明根据 AAO 和 MCu 的 Dp 形成了不同的 Cu 和 Cu2O 相百分比。由此产生的 HAR Cu NWs 也从硬模板中释放出来，以获得长度为 70 μm 的独立 NW 阵列，这可能会在大规模纳米器件应用中找到潜在用途。