Abstract The recent discovery of memristive devices based on two-dimensional materials have attracted much interest for emerging applications on flexible memory, neuromorphic computing, and so forth. Reducing the thickness to a single-layer level would prompt the scaling limit to sub-nanometer. However, monolayer materials based vertical memristive devices generally suffer inferior performance with high operating voltage, large leakage currents, and poor reliability. In this study, an interfacial polymer layer is inserted between the monolayer hexagonal boron nitride (h-BN) and top electrodes, which not only helps to constrain the conducting filament size but also block the formation of excess filaments from the bottom Cu foil. Therefore, the device shows stable bipolar resistive switching behavior with low operating voltage ( 105 s), and excellent flexibility. It is demonstrated that tunneling conduction is shown in off-state and on-state current conducts via metallic conducting filaments, which are formed by the substitute of metal ions for lattice vacancies in h-BN. This work presents a scalable interface engineering strategy to control the interactions between metal ions and defects in monolayer h-BN films and sheds light on their promising application for large-scale integrated ultrathin flexible memory.

中文翻译：

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亚 500 mV 单层六方氮化硼基存储器件

摘要 最近发现的基于二维材料的忆阻器件引起了柔性存储器、神经形态计算等新兴应用的广泛兴趣。将厚度降低到单层水平将促使缩放限制为亚纳米。然而，基于单层材料的垂直忆阻器件通常性能较差，工作电压高，漏电流大，可靠性差。在这项研究中，在单层六方氮化硼 (h-BN) 和顶部电极之间插入了界面聚合物层，这不仅有助于限制导电细丝的尺寸，还可以阻止底部铜箔形成多余的细丝。因此，该器件在低工作电压（105 s）下表现出稳定的双极电阻开关行为，和出色的灵活性。结果表明，隧道传导在关态和导通态电流通过金属导电细丝传导，金属导电细丝是由金属离子替代 h-BN 中的晶格空位形成的。这项工作提出了一种可扩展的界面工程策略，以控制单层 h-BN 薄膜中金属离子与缺陷之间的相互作用，并阐明它们在大规模集成超薄柔性存储器中的有前景的应用。