In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.

中文翻译：

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基于空穴位移的L3腔二维GaN光子晶体设计

在本文中，我们报告了 GaN-AlN-蓝宝石层状结构中移动 2D 光子晶体腔侧孔的建模、仿真和分析。该设计使用 Lumerical 有限差分时域进行仿真。晶格常数 a 为 157 nm，孔直径 d 为 106 nm。腔体基于 L3，我们通过简单地将两个孔从距离分别为 132、142 和 152 nm 的线腔移开来演示。在 152 nm 腔距下达到的最高品质因数 Q 值为 2.25 × 104。