716 mV Open‐Circuit Voltage with Fully Screen‐Printed p‐Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side,Solar RRL

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716 mV Open‐Circuit Voltage with Fully Screen‐Printed p‐Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side
Solar RRL ( IF 6.0 ) Pub Date : 2020-11-26 , DOI: 10.1002/solr.202000703
Byungsul Min ₁ , Nadine Wehmeier ₁ , Till Brendemuehl ₁ , Felix Haase ₁ , Yevgeniya Larionova ₁ , Lasse Nasebandt ₁ , Henning Schulte-Huxel ₁ , Robby Peibst _{1,

2} , Rolf Brendel _{1,

3}

Affiliation

This article reports the recent progress of p‐type back junction solar cells featuring an aluminum front grid and an n⁺‐type passivating polysilicon on oxide (POLO) contact at the cell rear side. The best cell has an efficiency of 22.6% and an open‐circuit voltage of 716 mV, independently confirmed by Institute for Solar Energy Research Hamelin (ISFH) CalTeC. The cell area is 244.5 cm². The increase in the SiN_x capping layer thickness at the cell rear side reduces the deterioration of passivation quality of the POLO contact by screen‐printed silver. This increases the open‐circuit voltage by 22 mV compared with cells with a thinner nitride layer thickness. The investigation with scanning electron microscopy shows that the damage of the POLO contacts underneath the screen‐printed metal contacts is avoided by increasing the SiN_x capping layer thickness. A contact resistivity of 2 mΩ cm² is measured using the transfer length method.

中文翻译：

716 mV开路电压，带有全丝网印刷的p型后结太阳能电池，其铝质前栅极和背面的氧化物触点上具有钝化多晶硅

本文报道了p型背结太阳能电池的最新进展，该技术具有铝制前栅极和在电池后侧具有n ⁺型钝化氧化硅多晶硅（POLO）触点。最佳太阳能电池的效率为22.6％，开路电压为716 mV，这是由哈默林太阳能研究所（ISFH）CalTeC独立确认的。单元面积为244.5cm ²。SiN _x的增加电池背面的覆盖层厚度减少了丝网印刷银对POLO触点钝化质量的影响。与氮化物层厚度较薄的电池相比，这可将开路电压提高22 mV。扫描电子显微镜的研究表明，通过增加SiN _x覆盖层的厚度可以避免POLO触点在丝网印刷金属触点下方的损坏。使用转移长度法测量2mΩcm ^2的接触电阻率。

更新日期：2021-01-07

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