In this paper, a compact, high extinction ratio, and low power consumption plasmonic modulator is designed by active materials of Indium Tin Oxide (ITO) and graphene. The proposed modulator consists of a Graphene/HfO₂/ITO/HfO₂/Graphene stack embedded in a silicon waveguide. Due to the simultaneous use of the Epsilon-Near-Zero property for both ITO and graphene, the maximum optical mode attenuation is obtained. Simulation results by Finite-Element-Method (FEM) show the high extinction ratio of 14.6 dB and insertion loss of 2.98 dB at a telecommunication wavelength of 1.55μm, while the energy consumption of 1.51 fj/bit is obtained for a unit length of 1 μm, which is the lowest in comparison to the previous works. Owing to the low power consumption and compact size of the proposed plasmonic modulator, it is useful for integrated photonics circuit and optic communications.

本文以氧化铟锡（ITO）和石墨烯为活性材料，设计了一种紧凑，高消光比，低功耗的等离激元调制器。拟议的调制器由石墨烯/ HfO ₂ / ITO / HfO _2组成/石墨烯叠层嵌入硅波导中。由于同时使用ITO和石墨烯的Epsilon-Near-Zero属性，因此可获得最大的光学模式衰减。有限元方法（FEM）的仿真结果表明，在1.55μm的电信波长下，高消光比为14.6 dB，插入损耗为2.98 dB，而单位长度为1时，能耗为1.51 fj / bit微米，与以前的作品相比是最低的。由于所提出的等离激元调制器的低功耗和紧凑的尺寸，它对于集成光子电路和光通信很有用。