Abstract Bipolar electronic behavior has been demonstrated in amorphous Cu–Al–O thin films prepared on soda-lime glass substrate via radio frequency (r.f.) magnetron sputtering deposition technique. The tunable majority charge carrier type is as a result of the intentional adjustment of the percentage chemical composition of the material. Signs of Hall coefficients from Hall effect measurement and slopes of Mott-Schottky plots obtained for the films indicate the majority charge carrier type of each films. Negative Hall coefficient and a positive Mott-Schottky slope were obtained for the Al-rich film showing its n-type nature. Positive Hall coefficient and negative Mott-Schottky slope were obtained for the Cu-rich film showing its p-type nature. X-Ray Photoelectron Spectroscopy (XPS) was used to explain the variation in charge carrier type as a result of the adjustments made to the percentage chemical composition of the film. The I–V curves obtaine from simple devices fabricated show that the homojunction formed from the two films exhibit rectifying and photovoltaic properties. The rectifying behavior was studied between a bias of −1 V to +1 V. In addition, a VOC of 0.33 V, a JSC of 8.00 mA/cm2, an FF of 0.30 and a PCE of 0.79% were obtained from the photovoltaic device fabricated.

中文翻译：

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射频磁控溅射制备的非晶Cu-Al-O薄膜的双极电导率

摘要 通过射频 (rf) 磁控溅射沉积技术在钠钙玻璃基板上制备的非晶 Cu-Al-O 薄膜中证明了双极电子行为。可调多数载流子类型是有意调整材料化学成分百分比的结果。来自霍尔效应测量的霍尔系数的符号和为薄膜获得的莫特-肖特基图的斜率表明每个薄膜的多数电荷载流子类型。对于显示其 n 型性质的富铝膜，获得负霍尔系数和正莫特-肖特基斜率。富铜薄膜获得正霍尔系数和负莫特-肖特基斜率，显示其 p 型性质。X 射线光电子能谱 (XPS) 用于解释由于对薄膜的化学成分百分比进行调整而导致的电荷载流子类型的变化。从制造的简单器件获得的 I-V 曲线表明，由两种薄膜形成的同质结表现出整流和光伏特性。研究了 -1 V 至 +1 V 偏置之间的整流行为。此外，从光伏器件中获得了 0.33 V 的 VOC、8.00 mA/cm2 的 JSC、0.30 的 FF 和 0.79% 的 PCE捏造的。