Abstract Bismuth magnesian niobium (Bi2Mg2/3Nb4/3O7, BMNO) thin films are deposited on Pt/Ti/SiO2/Si substrates at different substrate temperatures by magnetron sputtering. The effect of substrate temperature on the energy storage properties of BMNO thin films is investigated systematically. The X-ray diffraction pattern reveals the thin films are polycrystalline with cubic pyrochlore structure. The dielectric constant of BMNO thin films increases with the substrate temperature, reaches the maximum value of 161 at 700 °C and starts decreasing thereafter. The maximum electrical breakdown strength and recoverable stored energy density are respectively obtained as 3.78 MV/cm and 58.9 J/cm3 when the BMNO thin films are deposited at 700 °C. In addition, the BMNO thin films possess excellent thermal stability of stored energy properties in a wide range of temperatures (-150 °C–200 °C). These results suggest that the BMNO thin films are a promising candidate for lead-free energy storage application in equipment operation under adverse environments.

中文翻译：

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衬底温度对磁控溅射制备铋镁铌薄膜储能性能的影响

摘要 通过磁控溅射在不同衬底温度下在Pt/Ti/SiO2/Si衬底上沉积铋镁铌(Bi2Mg2/3Nb4/3O7, BMNO)薄膜。系统地研究了衬底温度对BMNO薄膜储能性能的影响。X 射线衍射图显示薄膜是具有立方烧绿石结构的多晶薄膜。BMNO 薄膜的介电常数随着衬底温度的升高而增加，在 700 °C 时达到最大值 161，此后开始下降。当 BMNO 薄膜在 700 °C 下沉积时，最大电击穿强度和可恢复存储能量密度分别为 3.78 MV/cm 和 58.9 J/cm3。此外，BMNO薄膜在很宽的温度范围内（-150°C-200°C）具有优异的储能特性热稳定性。这些结果表明，BMNO 薄膜是不利环境下设备运行中无铅储能应用的有希望的候选者。