Silicon nanocrystals (Si-NC) in silicon oxide is a promising material for many applications in micro- and nanoelectronics. This article develops a theory of the kinetics of Si-NC formation when there are both diffusion and reaction mechanisms of their formation. The theoretical expressions obtained for changing the concentration of nanocrystals and silicon implanted in oxide and their sizes are consistent with experimental results and can be used to optimize the formation conditions of technological processes of Si-NC formation. An important modern problem is the doping of nanocrystals with impurities, which allows the creation of silicon Si-NC–emitting light, and are also objects for solar energy. We have shown that nanocrystals with sizes less than 5 nm are limited by the potential barrier that creates surface tension. Thermodynamic calculations showed that there is a critical size of the Si-NC and if it is smaller, then it is impossible to introduce an impurity into it. These calculations were performed for doping silicon with phosphorus and tin.

氧化硅中的硅纳米晶体（Si-NC）是微电子和纳米电子学中许多应用的有前途的材料。本文提出了一种同时存在扩散和反应机理的Si-NC形成动力学的理论。改变注入的纳米晶和硅的浓度及其尺寸的理论表达式与实验结果相吻合，可用于优化Si-NC形成工艺过程的形成条件。现代的一个重要问题是用杂质掺杂纳米晶体，这允许产生硅Si-NC发射光，并且也是太阳能的对象。我们已经表明，尺寸小于5 nm的纳米晶体受到产生表面张力的势垒的限制。热力学计算表明，Si-NC存在临界尺寸，如果尺寸较小，则不可能将杂质引入其中。这些计算是为了用磷和锡掺杂硅而进行的。