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Study of the semiconducting properties of Cu 2 ZnSnS 4 thin films grown by ultrasonic spray pyrolysis of water-dissolved precursors
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-11-27 , DOI: 10.1007/s10854-020-04622-x
Ignacio Estevez Espinoza , Yasuhiro Matsumoto Kuwabara , Mauricio Ortega López , J. Octavio Estevez Espinoza

Cu2ZnSnS4 (CZTS) thin films were deposited on glass-slide substrates by ultrasonic spray pyrolysis at the substrate temperatures in the 330–420 °C range, using water–ethanol solutions containing CuCl2–H2O, ZnCl2, SnCl2, and (NH2)2CS (thiourea). After being deposited, CZTS films were annealed under vacuum and then characterized in regarding their structural and optical properties. The X-ray diffraction and Raman spectroscopy studies indicated that CZTS thin films with kesterite as predominant phase could be obtained. The X-ray diffraction patterns of all deposited samples displayed diffraction peaks corresponding to the planes (112), (220), and (312) of kesterite CZTS and diffraction peaks belonging to phases other than CZTS were apparently undetectable for the X-ray technique. Furthermore, their Raman spectra were featured for a widely structured Raman band in the 200–400 cm−1 wavenumber area. After being deconvoluted, Raman peaks belonging only to kesterite CZTS were revealed. However, a further analysis of the UV–Vis absorbance spectra indicated all our films strongly absorbs in this spectral region. In the low photon energy region (< 1.5 eV), Tauc plots revealed electron transitions with characteristic energy values in the 1.15–1.34 eV range, which could be attributed at the presence of tetragonal Cu2SnS3 and point defects (VS and VZn) into CZTS. All prepared CZTS films display the p-type conductivity as verified by Hall measurements.



中文翻译:

水溶性前驱体超声喷雾热解法制备Cu 2 ZnSnS 4薄膜的半导体性能研究

使用含CuCl 2 -H 2 O,ZnCl 2和SnCl的水-乙醇溶液,在330-420°C的基板温度下,通过超声喷雾热解法将Cu 2 ZnSnS 4(CZTS)薄膜沉积在玻璃滑动基板上。2和(NH 22 CS(硫脲)。沉积后,将CZTS薄膜在真空下退火,然后对其结构和光学性质进行表征。X射线衍射和拉曼光谱研究表明,可以得到以钙钛矿为主要相的CZTS薄膜所有沉积样品的X射线衍射图样均显示出对应于钾长石CZTS平面(112),(220)和(312)的衍射峰,而X射线技术显然无法检测到属于CZTS以外的相的衍射峰。此外,他们的拉曼光谱的特征是在200–400 cm -1波数区域内结构广泛的拉曼带。去卷积后,发现仅属于钾长石CZTS的拉曼峰。但是,对UV-Vis吸收光谱的进一步分析表明,我们所有的薄膜都在该光谱区域强烈吸收。在低光子能量区域(<1.5 eV),Tauc曲线揭示了电子跃迁,其特征能量值在1.15–1.34 eV范围内,这可能归因于四方Cu 2的存在SnS 3和点缺陷(V SV Zn)进入CZTS。所有制备的CZTS膜均显示出p型电导率,这已通过霍尔测量证实。

更新日期:2020-11-27
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