We obtained a high-quality 40-pair AlInN/GaN distributed Bragg reflector with a high growth rate of the AlInN layers (500nmh⁻¹), showing almost no threading dislocations and a peak reflectivity of 99.9% at 413nm, by using a 0.3nm GaN cap layer grown on the AlInN layer at low growth temperature. We also found that the threading dislocations generated at the interfaces between the bottom AlInN and the top GaN in the cases of 5–10nm GaN cap layers which were typically used. Excess In atoms on the AlInN surfaces seem to cause the generation of the threading dislocations.

中文翻译：

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金属有机气相外延生长的高质量AlInN / GaN分布式布拉格反射器

通过使用0.3nm，我们获得了高质量的40对AlInN / GaN分布式布拉格反射器，其中AlInN层的生长速率很高（500nmh ^-1），在413nm处几乎没有显示出螺纹位错，峰值反射率在99.9％ GaN盖层在低生长温度下生长在AlInN层上。我们还发现，在通常使用5-10nm GaN盖层的情况下，底部AlInN和顶部GaN之间的界面处会产生螺纹位错。AlInN表面上过量的In原子似乎引起了螺纹位错的产生。