Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-state loss, and fast switching, compared with those of the Si counterparts. Through recent progress in the material and device technologies of SiC, production of 600–3300V class SiC unipolar devices such as power metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes has started, and the adoption of SiC devices has been demonstrated to greatly reduce power loss in real systems. However, the interface defects and bulk defects in SiC power MOSFETs severely limit the device performance and reliability. In this review, the advantages and present status of SiC devices are introduced and then defect engineering in SiC power devices is presented. In particular, two critical issues, namely defects near the oxide/SiC interface and the expansion of single Shockley-type stacking faults, are discussed. The current physical understanding as well as attempts to reduce these defects and to minimize defect-associated problems are reviewed.

碳化硅（SiC）功率器件的主要特点是，与Si相比，其阻断电压高，导通损耗小，开关速度快。通过SiC材料和器件技术的最新进展，开始生产600-3300V级SiC单极器件，例如功率金属氧化物半导体场效应晶体管（MOSFET）和肖特基势垒二极管，并且SiC器件的采用被证明可以大大减少实际系统中的功率损耗。但是，SiC功率MOSFET中的界面缺陷和体缺陷严重限制了器件的性能和可靠性。在这篇综述中，介绍了SiC器件的优点和现状，然后介绍了SiC功率器件中的缺陷工程。特别是两个关键问题，讨论了氧化物/ SiC界面附近的缺陷以及单个Shockley型堆叠缺陷的扩展。审查了当前的物理理解以及减少这些缺陷并最小化与缺陷相关的问题的尝试。