We have investigated the electron spin relaxation time of a (110)-oriented GaAs/AlGaAs superlattice (SL) with tunnel-coupled quantum wells at room temperature. As the tunnel coupling between quantum wells increased, the spin relaxation time decreased. Even when the strength of tunnel coupling was as large as 25meV, the spin relaxation time was 0.7ns, about seven times longer than that of bulk GaAs which has been used as a conventional spin transport layer. This finding indicates that (110)-oriented SL structures are one of the potential candidates for spin transport in both in-plane and out-of-plane directions in semiconductor-based spintronic devices.

我们已经研究了室温下具有隧道耦合量子阱的（110）取向GaAs / AlGaAs超晶格（SL）的电子自旋弛豫时间。随着量子阱之间的隧道耦合增加，自旋弛豫时间减少。即使当隧道耦合的强度高达25meV时，自旋弛豫时间也仅为0.7ns，比用作传统自旋传输层的体GaAs长约7倍。该发现表明，（110）取向的SL结构是在基于半导体的自旋电子器件中在平面内和平面外方向上自旋传输的潜在候选者之一。