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Detection of tunneling events in physically defined silicon quantum dot using single-shot measurements improved by numerical treatments
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-11-24 , DOI: 10.35848/1882-0786/abc923
Raisei Mizokuchi , Masahiro Tadokoro , Tetsuo Kodera

We report the detection of a single tunneling event of electrons in a physically defined silicon quantum dot system. In the measurement, we observed single-shot tunneling events in a quantum dot using a charge sensor; however, the tunneling statistics are difficult to acquire because of their weak signals. Hence, two numerical treatments using a digital filter and a change point detection technique are applied, and the latter enables precise signal detection, which is confirmed in the simulation. We expect the combination of such digital processing with integrated circuits to enable a fast qubit readout from a noisy system.



中文翻译:

通过数值处理改进的单次测量检测物理定义的硅量子点中的隧穿事件

我们报告了在物理定义的硅量子点系统中检测到电子的单个隧穿事件。在测量中,我们使用电荷传感器观察了量子点中的单发隧穿事件。但是,由于其信号较弱,因此难以获取隧道统计信息。因此,应用了使用数字滤波器和变化点检测技术的两种数值处理,并且后者实现了精确的信号检测,这在仿真中得到了证实。我们期望将此类数字处理与集成电路相结合,以实现从嘈杂系统中快速读取qubit。

更新日期:2020-11-24
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