The recent fabrication progress in logic circuits using atomic-scale silicon dangling bond (DB) makes it a promising candidate for field coupled nanocomputing. Moreover, the use of silicon substrate opens the possibilities to integrate DB circuits with existing infrastructure for the complementary metal-oxide-semiconductors (CMOS) devices. However, this emerging technology is still in its initial stage. This paper presents a T-shape structure to realize logic circuits. In addition, fundamental logic gates, such as, two-input AND, NAND, OR, XOR, and XNOR gates, are reported using the T-shape structure. Besides, a novel three-input majority (Si-DBM3) gate and a three-input XOR (Si-DBX3) gate, based on DB pairs, have been presented. Using the proposed Si-DBX3 and Si-DBM3 logic gates, a Full-adder (FA) is designed. All the logic gates are designed and verified using the SiQAD simulation tool.

中文翻译：

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原子硅量子点：一种新的原子逻辑电路设计范式

使用原子级硅悬键 (DB) 的逻辑电路的最新制造进展使其成为场耦合纳米计算的有希望的候选者。此外，硅衬底的使用开辟了将 DB 电路与互补金属氧化物半导体 (CMOS) 器件的现有基础设施集成的可能性。然而，这项新兴技术仍处于起步阶段。本文提出了一种T形结构来实现逻辑电路。此外，使用 T 形结构报告了基本逻辑门，例如两输入 AND、NAND、OR、XOR 和 XNOR 门。此外，还提出了一种基于 DB 对的新型三输入多数 (Si-DBM3) 门和三输入 XOR (Si-DBX3) 门。使用建议的 Si-DBX3 和 Si-DBM3 逻辑门，设计了一个全加器 (FA)。