An SRAM-based Physical Unclonable Function (PUF) with two independent bits/cells is presented along with a tilting preselection test designed to identify all the unstable bits. Results of analysis of the Decision Voltage of the SRAM-based PUF cell indicate that in certain conditions, only the NMOS transistors in the cell impact its response, whereas the PMOS devices are in cutoff. Two pairs of NMOS transistors are inserted in the cell, each of which represents an orthogonal bit. The tilt test evaluates the internal mismatch within each of the NMOS pairs so that if it is insufficient, the resulting bit is considered unstable and masked from the PUF response. The cell demonstrated a highly competitive area of 1420F ² per bit, a bit-error-rate (BER) of 3.1E-10, and a very low energy consumption of 21fJ/bit in 65nm. After preselection, the 2 bit/cell PUF exhibited a near-ideal inter-chip Hamming distance (49.5%) and percentage of ones (50.6%).

中文翻译：

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2位/单元倾斜的基于SRAM的PUF，BER为3.1E-10，在65nm处的能量为21 FJ /位

介绍了具有两个独立位/单元的基于SRAM的物理不可克隆功能（PUF），以及旨在识别所有不稳定位的倾斜预选测试。对基于SRAM的PUF单元的决策电压的分析结果表明，在某些情况下，只有单元中的NMOS晶体管会影响其响应，而PMOS器件处于截止状态。两对NMOS晶体管插入单元中，每对代表一个正交位。倾斜测试评估每个NMOS对中的内部失配，因此，如果该失配不足，则认为结果位不稳定，并被PUF响应掩盖。该单元展示出1420F ²的高度竞争优势 每比特，3.1E-10的误码率（BER）和65nm的21fJ / bit的极低能耗。预选后，2位/单元的PUF表现出接近理想的芯片间汉明距离（49.5％）和百分率（50.6％）。