In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage ( ${V} _{\mathrm{ ON}}$ ) and threshold voltage ( $V_{T}$ ) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of $V_{T}$ and ${V} _{\mathrm{ ON}}$ are quantitatively analyzed by coefficient of determination ( ${R} ^{2}$ ) in the regression analysis. The ${R} ^{2}$ values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias.

中文翻译：

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研究晶粒取向对隧道场效应晶体管中阈值电压和电流变化的影响的方法

在本文中，进行了一项调查，以统计分析隧道场效应晶体管 (TFET) 的整个亚阈值特性，具体取决于栅极功函数变化 (WFV)。首先，电流变化通过开启电压（ ${V} _{\mathrm{ ON}}$ ) 和阈值电压 ( $V_{T}$ ) 借助计算机辅助设计 (TCAD) 模拟技术。其次，变异 $V_{T}$ 和 ${V} _{\mathrm{ ON}}$ 通过决定系数进行定量分析（ ${R} ^{2}$ ) 在回归分析中。这 ${R} ^{2}$ 根据划分的门参数提取值。最后，证实了栅极部分的 WFV 导致隧道主要根据栅极偏置变化的区域中的电流变化。