Gate-All-Around Field Effect Transistors (GAAFETs) for the future technology nodes will have highly confined channel cross-sections. Effects like subband separation and geometry dependent density of states result in kinks, peaks and valleys appearing in terminal characteristics like capacitance and transconductance. This has significant effect on the circuit linearity performance, in analog and RF domains. In this paper, we have proposed a design rule for the maximum allowed overdrive voltages or minimum silicon body width for a given body thickness so that the effects of subband separation may be avoided. Effect of corner radius has also been included.

中文翻译：

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抑制过度非线性的环栅 FET 设计规则

用于未来技术节点的环栅场效应晶体管 (GAAFET) 将具有高度受限的沟道横截面。子带分离和几何相关状态密度等效应会导致终端特性（如电容和跨导）中出现扭结、峰和谷。这对模拟和射频域中的电路线性性能有显着影响。在本文中，我们针对给定的主体厚度提出了最大允许过驱动电压或最小硅主体宽度的设计规则，以便可以避免子带分离的影响。角半径的影响也包括在内。