An extraction technique for flat band voltage ( ${V}_{\textit {FB}}$ ) in an amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) using the frequency-independent ${C}-{V}$ relationship which is taken from the measured multi-frequency ${C}-{V}$ characteristics, is proposed. The proposed method comprises the consideration of multiple physical parameters for accurate ${V}_{\textit {FB}}$ extraction, including the sub-gap density of states, doping concentration, gate oxide capacitance, and series resistance. The method was verified by comparing both the measured current–voltage characteristics and the extracted ${V}_{\textit {FB}}$ value with the technology computer-aided design simulation results. Moreover, we confirmed the versatility of the method by extracting ${V}_{\textit {FB}}$ from devices with different oxygen contents. The proposed physical-based technique showed better accuracy and compatibility with amorphous oxide semiconductor (AOS) TFTs compared with classical empirically based methods. We believe that our technique is useful for the experimental design and optimization of the gate metal-dielectric-AOS stack for high-performance AOS TFTs.

中文翻译：

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非晶InGaZnO薄膜晶体管多频C'V特性提取平带电压技术


使用与频率无关的 ${C}-{V 提取非晶 InGaZnO (a-IGZO) 薄膜晶体管 (TFT) 中的平带电压 ( ${V}_{\textit {FB}}$ ) 的技术提出了从测量的多频${C}-{V}$特性中获取的关系。所提出的方法包括考虑多个物理参数以进行精确的 ${V}_{\textit {FB}}$ 提取，包括子能隙态密度、掺杂浓度、栅极氧化物电容和串联电阻。通过将测量的电流-电压特性和提取的${V}_{\textit {FB}}$值与技术计算机辅助设计仿真结果进行比较，验证了该方法。此外，我们通过从不同氧含量的设备中提取${V}_{\textit {FB}}$来确认该方法的多功能性。与传统的基于经验的方法相比，所提出的基于物理的技术显示出更好的精度以及与非晶氧化物半导体（AOS）TFT 的兼容性。我们相信，我们的技术对于高性能 AOS TFT 的栅极金属-电介质-AOS 堆栈的实验设计和优化非常有用。