Abstract This paper reports the fabrication and characterization of several thulium oxide and nitride thin films grown by reactive magnetron direct-current sputtering. Hysteresis curves of the Tm emission spectra of the sputtering plasma versus the flow of N2 or O2 around the Tm-metal target were monitored. Emission spectra of atomic transition lines in the region between 370 and 420 nm were identified to be of neutral thulium. The plasma emission was compared to the hysteresis curves generated by monitoring the sputter rate and target voltage. The nitride films' composition and optical properties were determined by X-Ray Diffraction, and optical transmission spectroscopy. The composition of the oxide films was determined by energy dispersive X-ray spectroscopy. The films are initially amorphous but crystallize after thermal treatment at 800°C. The optical bandgap values obtained using the Tauc method are consistent with what has been previously reported for both Tm2O3 and TmN prepared by other methods.

中文翻译：

---

通过直流反应磁控溅射生长的 Tm2O3、TmN 和 TmOxNy 薄膜的光学和结构表征

摘要 本文报道了通过反应磁控管直流溅射生长的几种氧化铥和氮化铥薄膜的制备和表征。监测溅射等离子体的 Tm 发射光谱与 Tm 金属靶周围 N2 或 O2 流量的滞后曲线。370 和 420 nm 之间区域的原子跃迁线的发射光谱被确定为中性铥。将等离子体发射与通过监测溅射速率和靶电压产生的滞后曲线进行比较。氮化物薄膜的组成和光学特性由 X 射线衍射和光学透射光谱确定。氧化膜的组成通过能量色散 X 射线光谱法确定。薄膜最初是无定形的，但在 800°C 热处理后结晶。