In this study, metal-oxide (NiO:ZnO) nanocomposites mixed with different weight-percentages (2, 10, 20 % NiO) content were coated on the p-Si wafer via spin-coating method. The optical and electrical features of the Al/(PCBM/NiO:ZnO)/p-Si structures/diodes were investigated and compared via current-voltage/time (I–V/t) and capacitance/conductance-voltage-frequency (C/G–V-f) characteristics in dark and various illumination intensities (20, 40, 60, 80, 100 mW/cm²) at room temperature. Main electrical parameters of them such as ideality factor (n), barrier height (Φ_b), rectification ratio (RR = I_F/I_R) and series resistance (R_s) were calculated for each percentage (2, 10, and 20 % NiO). Experimental results show that the best percentages of NiO is 20 % in respect of high value of RR and low Rs, but the value of n increases with increasing in percentages. The transient photocurrent increases with increasing illumination level. The slope (m) of the double-logarithmic I_ph-P plots were found as 0.67, 0.87 and 0.82, respectively, and these slopes confirmed that these nanocomposites exhibit photoconduction behaviour and hence Al/(PCBM/NiO:ZnO)/p-Si structure can be used a photo device/sensor. The observed changes in the I with illumination, C and G with frequency are the results of interface states (N_ss) located at (PCBM/NiO:ZnO)/p-Si interface and so reorder and restructure of them under illumination, bias voltage, and frequency.

在这项研究中，通过旋涂法将混合了不同重量百分比（2％，10％，20％NiO）含量的金属氧化物（NiO：ZnO）纳米复合材料涂覆在p-Si晶片上。研究了Al /（PCBM / NiO：ZnO）/ p-Si结构/二极管的光学和电学特性，并通过电流-电压/时间（IV-t）和电容/电导-电压-频率（C / G–Vf）特性，以及室温下各种光照强度（20、40、60、80、100 mW / cm ²）。它们中的主要的电气参数，例如理想因子（n）时，势垒高度（Φ _b），整流比（RR = I _˚F / I _{- [R} ）和串联电阻（R_小号为每个百分比（2％，10％和20％NiO）计算）。实验结果表明，相对于较高的RR和较低的Rs，NiO的最佳百分比为20％，但是n的值随百分比的增加而增加。瞬态光电流随着照明水平的提高而增加。双对数I _ph - P图的斜率（m）分别为0.67、0.87和0.82，这些斜率证实了这些纳米复合材料具有光电导行为，因此Al /（PCBM / NiO：ZnO）/ p- Si结构可以用于光电器件/传感器。观察到的I在光照下的变化，C和G在频率下的变化是界面状态（N _ss）位于（PCBM / NiO：ZnO）/ p-Si界面，因此可以在照明，偏置电压和频率下对它们进行重新排序和重组。